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Improvement of heavy dopant doped Ni-silicide using ytterbium interlayer for nano-scale MOSFETS with an ultra shallow junction.
Shin HS, Oh SK, Kang MH, Li SG, Lee GW, Lee HD. Shin HS, et al. J Nanosci Nanotechnol. 2011 Jul;11(7):5628-32. doi: 10.1166/jnn.2011.4387. J Nanosci Nanotechnol. 2011. PMID: 22121582
In addition, the cross-sectional profile of the proposed Ni-silicide showed less agglomeration despite the high temperature post-silicidation annealing, and it can be said that the proposed structure was little dependence on the temperature post-silicidation …
In addition, the cross-sectional profile of the proposed Ni-silicide showed less agglomeration despite the high temperature post-s …
Interfacial reactions of ultrahigh vacuum deposited ytterbium thin films on silicon.
Chi KS, Chen LJ. Chi KS, et al. Micron. 2002;33(6):549-53. doi: 10.1016/s0968-4328(02)00010-0. Micron. 2002. PMID: 12020700
Epitaxial ytterbium silicide thin films were grown on (111)Si by ultrahigh vacuum deposition and subsequent thermal annealing. ...
Epitaxial ytterbium silicide thin films were grown on (111)Si by ultrahigh vacuum deposition and subsequent thermal annealing. …